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BCP5316Q Datasheet 80V PNP MEDIUM POWER TRANSISTORS

Manufacturer: Diodes Incorporated

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General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Overview

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -80V.
  • IC = -1A High Continuous Collector Current.
  • ICM = -2A Peak Pulse Current.
  • 2W Power Dissipation.
  • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A.
  • Complementary NPN type: BCP5616Q.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCP5316Q 80V PNP MEDIUM POWER.

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