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Diodes Semiconductor Electronic Components Datasheet

DCX52 Datasheet

PNP SURFACE MOUNT TRANSISTOR

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DCX52/-16
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCX55)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Symbol
VCBO
VCEO
VEBO
ICM
IC
SOT89-3L
COLLECTOR
3 E 2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Value
-60
-60
-5
-1.5
-1
Unit
V
V
V
A
A
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air @ TA = 25°C
Operating and Storage Temperature Range
(Note 3)
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-60
V IC = -100μA, IE = 0A
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
V IC = -10mA, IB = 0A
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V IE = -10μA, IC = 0A
Collector Cut-off Current
ICBO
-100
nA VCB = -30V, IE = 0
-20 μA VCB = -30V, IE = 0, TA = 150°C
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
IEBO
-100
nA VEB = -5V, IC = 0A
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.5 V IC = -500mA, IB = -50mA
Base-Emitter Turn-On Voltage
VBE(ON)
-1.0 V IC = -500mA, VCE = -2V
DC Current Gain
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DCX52, DCX52-16
DCX52
hFE
63
40
63
⎯ ⎯ ⎯ IC = -5mA, VCE = -2V
⎯ ⎯ ⎯ IC = -500mA, VCE = -2V
250 IC = -150mA, VCE = -2V
DCX52-16
100 250 IC = -150mA, VCE = -2V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
200
MHz IC = -50mA, VCE = -5V,
f = 100MHz
Output Capacitance
Cobo
25 pF VCB = -10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31155 Rev. 4 - 2
1 of 4
www.diodes.com
DCX52/-16
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DCX52 Datasheet

PNP SURFACE MOUNT TRANSISTOR

No Preview Available !

1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
www.DataSheet4U.com
DS31155 Rev. 4 - 2
2 of 4
www.diodes.com
DCX52/-16
© Diodes Incorporated


Part Number DCX52
Description PNP SURFACE MOUNT TRANSISTOR
Maker Diodes
Total Page 4 Pages
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