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DGD2181M - HIGH-SIDE AND LOW-SIDE GATE DRIVER

General Description

The DGD2181M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration.

High-voltage processing techniques enable the DGD2181M’s high-side to switch to 600V in a bootstrap operation.

Key Features

  • Floating High-side Driver in Bootstrap Operation to 600V.
  • Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration.
  • 1.9A Source / 2.3A Sink Output Current Capability.
  • Outputs Tolerant to Negative Transients.
  • Wide Low-side Gate Driver and Logic Supply: 10V to 20V.
  • Logic Input (HIN and LIN) 3.3V Capability.
  • Schmitt Triggered Logic Inputs with Internal Pull Down.
  • Undervoltage Lockout for High and Low Side Drivers.
  • Extended Temperature Range:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DGD2181M HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The DGD2181M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2181M’s high-side to switch to 600V in a bootstrap operation. The DGD2181M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. The DGD2181M is offered in SO-8 (Type TH) package and the operating temperature extends from -40°C to +125°C.