DGTD65T40S2PT Datasheet - Diodes

650V FIELD STOP IGBT

* High Speed Switching & Low Power Loss

* VCE(SAT) = 1.8V @ IC = 40A

* tRR = 60ns (Typ) @ diF/dt = 820A/µs

* EOFF = 0.4mJ @ TC = +25°C

* Maximum Junction Temperature +175°C

* Lead-Free Finish & RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note

DGTD65T40S2PT

1.36 MB

650v field stop igbt.

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DGTD65T40S2PT 650V FIELD STOP IGBT Diodes

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