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DMC1028UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC1028UFDB
Product Summary
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Device
BVDSS
Q1
N-Channel
12V
Q2
P-Channel
-20V
Description
RDS(ON) max
25mΩ @ VGS = 4.5V
30mΩ @ VGS = 3.3V
32mΩ @ VGS = 2.5V
80m@ VGS = -4.5V
90mΩ @ VGS = -3.3V
100mΩ @ VGS = -2.5V
ID max
TA = +25°C
6.0A
5.5A
5.3A
-3.4A
-3.2A
-3.0A
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD HBM Protected up to 1.5KV, MM Protected up to 150V.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:
Routers, Switchers, Network Interface Controllers (NICs)
Digital Subscriber Line (DSL)
Set-Top Boxes (STBs)
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1 D2
ESD PROTECTED
U-DFN2020-6 (Type B)
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
DMC1028UFDB-7
U-DFN2020-6 (Type B)
3,000/Tape & Reel
DMC1028UFDB-13
U-DFN2020-6 (Type B)
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
D8 = Product Type Marking Code
D8 YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 10
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
May 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC1028UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC1028UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current L = 0.1mH
Avalanche Energy L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1
N-CHANNEL
12
±8
6.0
4.8
7.1
5.7
1.4
40
12
8.4
Q2
P-CHANNEL
-20
±8
-3.4
-2.7
-4.0
-3.2
-1.4
-20
-12
7.5
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.36
1.89
92
66
19
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 3.3V)
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
12
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
17
19
21
30
0.7
787
203
177
4.8
7.9
10.5
18.5
1.2
2.9
4.6
9.4
15.7
3.7
12.0
1.8
Max
-
1.0
±10
1
25
30
32
40
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
m
V
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.2A
VGS = 3.3V, ID = 5.0A
VGS = 2.5V, ID = 4.8A
VGS = 1.8V, ID = 2.5A
VGS = 0V, IS = 1A
VDS = 6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 6V, ID = 6.8A
VDD = 6V, VGS = 4.5V,
RL = 1.1Ω, RG = 1Ω
IS = 5.4A, dI/dt = 100A/μs
IS = 5.4A, dI/dt = 100A/μs
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
2 of 10
www.diodes.com
May 2015
© Diodes Incorporated


Part Number DMC1028UFDB
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 10 Pages
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