900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Diodes Semiconductor Electronic Components Datasheet

DMC1030UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
V(BR)DSS
Q1
N-Channel
12V
Q2
P-Channel
-12V
RDS(ON) max
34m@ VGS = 4.5V
40m@ VGS = 2.5V
50m@ VGS = 1.8V
70m@ VGS = 1.5V
59m@ VGS = -4.5V
81m@ VGS = -2.5V
115m@ VGS = -1.8V
215m@ VGS = -1.5V
ID MAX
TA = +25°C
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
ESD PROTECTED
S2
D2
G2
D1
D1
D2
G1
S1
Pin1
Bottom View
Ordering Information (Note 4)
D1 D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Notes:
Part Number
DMC1030UFDB -7
DMC1030UFDB -13
Case
U-DFN2020-6 Type B
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
D3 YM
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Mar
3
2014
B
Apr May
45
2015
C
Jun Jul
67
2016
D
Aug
8
Sep
9
2017
E
Oct
O
1 of 9
www.diodes.com
2018
F
Nov Dec
ND
April 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC1030UFDB Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC1030UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Q1
N-CHANNEL
12
±8
5.1
4.1
6.6
5.3
2
35
Q2
P-CHANNEL
-12
±8
-3.9
-3.1
-5.0
-4.0
-1.7
-25
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.36
1.89
92
66
18
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
12
VGS(th)
RDS(ON)
VSD
0.4
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ
17
20
24
28
0.7
1003
132
115
11.3
12.2
23.1
1.3
1.5
4.4
7.4
18.8
4.9
7.6
0.9
Max
1.0
±10
1
34
40
50
70
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 12V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.6A
mVGS = 2.5V, ID = 4.2A
VGS = 1.8V, ID = 3.8A
VGS = 1.5V, ID = 1.5A
V VGS = 0V, IS = 4.8A
pF
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 10V, ID = 6.8A
nC
ns
ns VDD = 6V, VGS = 4.5V,
ns RL = 1.1, RG = 1
ns
nS IS = 5.4A, dI/dt = 100A/μs
nC IS = 5.4A, dI/dt = 100A/μs
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated


Part Number DMC1030UFDB
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
PDF Download

DMC1030UFDB Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Diodes
2 DMC1030UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Diodes





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy