DMC1030UFDB Datasheet | Diodes Incorporated

PLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 N-Channel Q2 P-Channel BVDSS 12V -12V RDS(ON) max 34mΩ @ VGS = 4.5V 40mΩ @ VGS = 2.5V 50mΩ @ VGS = 1.8V 70mΩ @ VGS = 1.5V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 215mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.1A 4.7A 4.2A 3.6A -3.9A -3.3A -2.8A -2.0A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - Low On-Resistance - Low Input Capacitance - Low Profile, 0.6mm Max Height - ESD Protected Gate - Totally Lead-Free & Fully RoHS...