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DMC25D1UVT Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-12V
RDS(ON)
4Ω @ VGS = 4.5V
55mΩ @ VGS= -4.5V
70mΩ @ VGS= -2.5V
ID
TA = +25°C
0.5A
-3.9A
-3.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
Vin, R1 4
Q2
3 Vout, C1
D1
D2
ON/OFF 5
2
Q1
Vout, C1
G1
G2
Top View
R1, C1 6
1 R2
Top View
Internal circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
Gate Protection
Diode
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D1UVT-7
DMC25D1UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G2
D1
G1
CC65DD
S2
S1 D2 D2
C6D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
1 of 9
www.diodes.com
April 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC25D1UVT Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IS
IDM
Maximum Ratings Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Steady State
Note 9
Symbol
VDSS
VGSS
ID
IS
IDM
DMC25D1UVT
Value
25
-0.5
+8
0.5
1.2
1.5
Unit
V
V
A
A
A
Value
-12
±8
-3.9
-17.4
-2.82
-40
-40
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
Note 9
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.3
100
5
36
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
25
0.65
Typ
0.85
3.8
0.76
27.6
8.5
3.3
25
0.4
0.9
0.1
0.04
2.5
1.4
5.7
4.3
Max
1
100
1.5
4
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 20V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4.5V, ID = 0.4A
V VGS = 0V, IS = 0.29A
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 5V, ID = 0.2A
ns
VGS = 4.5V, VDS = 6V,
RG = 50Ω, ID = 0.5A
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
2 of 9
www.diodes.com
April 2015
© Diodes Incorporated


Part Number DMC25D1UVT
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
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