Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Power Management Functions
Analog Switch
Mechanical Data
Case: POWE
Features
- Device BVDSS Q1 30V Q2 -30V
RDS(ON) max
16mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V 28mΩ @ VGS = -10V 38mΩ @ VGS = -4.5V
ID max TA = +25°C
9.0A 8.0A -6.8A -5.8A.
- Low On-Resistance.
- Low Input Capacitance.
- Fast Switching Speed.
- Low Input/Output Leakage.
- Complementary Pair MOSFET.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).