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Diodes Semiconductor Electronic Components Datasheet

DMC3035LSD Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC3035LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Complementary Pair MOSFETs
Low On-Resistance
N-Channel: 35m@ 10V
61m@ 4.5V
P-Channel: 65m@ -10V
115m@ -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.072g (approximate)
SOP-8L
D2
D1
S2 D2
G2 D2 G2
S1 D1
G1 D1
G1
TOP VIEW
TOP VIEW
Internal Schematic
S2
N-Channel MOSFET
S1
P-Channel MOSFET
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
6.9
5.8
30
Unit
V
V
A
A
Maximum Ratings P-CHANNEL @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-5
-4.2
-20
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
PD
RθJA
Tj, TSTG
2
62.5
-55 to +150
Notes:
1. Device mounted on 2oz. copper pads on 2” x 2” FR4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
1 of 7
www.diodes.com
October 2008
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC3035LSD Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC3035LSD
Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
30
1
0.5
Qg
Qgs
Qgd
Typ Max Unit
⎯⎯ V
1 μA
⎯ ± 100 nA
2.1 V
28
51
35
61
mΩ
7.7
S
1.2 V
384
67
48
1.3
pF
pF
pF
Ω
4.3
8.6
nC
1.2
2.5
Test Condition
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.0A
VDS = 5V, ID = 6.9A
VGS = 0V, IS = 1A
VDS = 15V, VGS = 0V, f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 10V, VGS = 4.5V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
VDS = 10V, VGS = 10V, ID = 10A
Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
-30
-1
-0.5
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Typ
56
98
336
70
49
4.6
4.0
7.8
1.0
2.5
Max
-1.0
± 100
-2.1
65
115
5.2
-1.2
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
S VDS = -10V, ID = -5A
V VGS = 0V, IS = -2.6A
pF
pF VDS = -25V, VGS = 0V, f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V, VGS = -4.5V, ID = -5A
nC VDS = 15V, VGS = -10V, ID = -5A
VDS = 15V, VGS = -10V, ID = -5A
VDS = 15V, VGS = -10V, ID = -5A
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
2 of 7
www.diodes.com
October 2008
© Diodes Incorporated


Part Number DMC3035LSD
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
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