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DMC31D5UDJ Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC31D5UDJ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 30V
Q2 -30V
RDS(ON) max
1.5@ VGS = 4.5V
2.0@ VGS = 2.5V
3.0@ VGS = 1.8V
4.5@ VGS = 1.5V
5@ VGS = -4.5V
6@ VGS = -2.5V
7@ VGS = -1.8V
10@ VGS = -1.5V
ID max
TA = +25°C
0.22A
-0.2A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT963
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.027 grams (approximate)
D1 G2 S2
ESD PROTECTED
Top View
S1 G1 D2
Top View
Schematic and
Transistor Diagram
Ordering Information (Note 4)
Part Number
DMC31D5UDJ-7
DMC31D5UDJ-7B
Case
SOT963
SOT963
Packaging
10K/Tape & Reel
10K/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. The options -7 and -7B stand for different taping orientations.
Marking Information
U1 U1 = Product Type Marking Code
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
1 of 9
www.diodes.com
June 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMC31D5UDJ Datasheet

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

DMC31D5UDJ
Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
30
±12
220
160
200
600
Units
V
V
mA
mA
mA
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-30
±12
-200
-140
-200
-600
Units
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady State
Symbol
PD
RθJA
TJ, TSTG
Value
350
361
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
@TC = +25°C
BVDSS
IDSS
IGSS
30
—— V
— 100 nA
— ±10 µA
Gate Threshold Voltage
VGS(th)
0.4
1.0
— 0.9 1.5
V
— 1.0 2.0
Static Drain-Source On-Resistance
RDS(ON)
1.2 3.0
1.4 4.5
— 2.3 —
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
VSD
0.6 1.0
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss — 22.6 —
Coss — 2.68 —
Crss — 1.8 —
Qg — 0.38 —
Qgs — 0.05 —
Qgd — 0.07 —
tD(on)
3.2
tr — 2.2 —
tD(off)
21
tf — 7.5 —
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VGS = 0V, IS = 10mA
VDS = 15V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 15V,
ID = 200mA
VDD = 15V, VGS = 4.5V,
RG = 2, ID = 200mA
DMC31D5UDJ
Document number: DS36799 Rev. 2 - 2
2 of 9
www.diodes.com
June 2014
© Diodes Incorporated


Part Number DMC31D5UDJ
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 9 Pages
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