DMG4800LSD Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary V(BR)DSS 30V RDS(on) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TA = +25°C 9.8A 8.

Datasheet Details

Part number	DMG4800LSD
Manufacturer	Diodes Incorporated
File Size	239.81 KB
Description	Dual N-Channel MOSFET
Datasheet	DMG4800LSD-Diodes.pdf

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Backlighting  Power Management Functions  DC-DC Converters SO-8 Top View DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

100% avalanche rated part.
Low RDS(on) - minimizes conduction losses.
Low Qg - minimizes switching losses.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 standards for High Reliability.
PPAP Capable (Note 4) Mechanical Data.
Case: SO-8.
Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
Moisture Sensitivity: Level.

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