Datasheet Specifications
- Part number
- DMG4N60SJ3
- Manufacturer
- DIODES ↗
- File Size
- 595.49 KB
- Datasheet
- DMG4N60SJ3-Diodes.pdf
- Description
- N-Channel MOSFET
Description
NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A D.Features
* Low On-ResistanceApplications
* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.DMG4N60SJ3 Distributors
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