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DMG4N65CTI Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMG4N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
650V
3.0Ω@VGS = 10V
Package
ITO220-3
ID
TC = 25°C
4.0 A
Description
This new generation complementary MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Applications
• Motor control
• Backlighting
• DC-DC Converters
• Power management functions
Features
Low Input Capacitance
High BVDss rating for power application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: ITO220-AB
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish-Matte Tin annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
D
ITO-220AB
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG4N65CTI
Case
ITO220-AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
4N65CTI
YYWW
4N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 12 = 2012)
WW = Week (01 - 53)
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMG4N65CTI Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMG4N65CTI
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note
5,6) VGS = 10V
Pulsed Drain Current (Note 7)
Steady
State
TC = +25°C
TC = +70°C
Avalanche Current (Note 8 ) VDD = 100V, VGS = 10V, L = 60mH
Repetitive avalanche energy (Note 7)
Symbol
VDSS
VGSS
ID
IDM
IAS
EAS
Value
650
±30
4.0
3.0
6
3.9
456
Unit
V
V
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Thermal Resistance, Junction to Case @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Max
8.35
12.36
10.69
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
Typ
BVDSS
IDSS
IGSS
650
-
-
-
-
-
VGS(th)
RDS (ON)
|Yfs|
VSD
3
-
-
-
-
2.1
3.7
0.7
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
- 900
- 50
- 1.1
- 2.4
- 13.5
- 2.7
- 3.8
- 15.1
- 13.8
- 40
- 16
- 515
- 2330
Notes:
5. Device mounted on an infinite heatsink
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
Max
-
1.0
±100
5
3.0
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 650V, VGS = 0V
nA VGS = ±30V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 10V, ID = 2A
S VDS = 40V, ID = 2A
V VGS = 0V, IS = 1A
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = 10V, VDS = 520V,
ID = 4A
ns
ns VGS = 10V, VDS = 325V,
ns RG = 25, ID = 4A
ns
ns dI/dt = 100A/μs, VDS = 100V,
nC IF = 4A
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated


Part Number DMG4N65CTI
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
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