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DMG7702SFG - 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Feature

Features

  • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
  • Low RDS(ON).
  • minimize conduction losses.
  • Low VSD.
  • reducing the losses due to body diode conduction.
  • Low Qrr.
  • lower Qrr of the integrated Schottky reduces body diode switching losses.
  • Low gate capacitance (Qg/Qgs) ratio.
  • reduces risk of shootthrough or cross conduction currents at high frequencies.
  • Sma.

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Full PDF Text Transcription

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DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 10mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V Package ID TA = +25°C POWERDI3333-8 12 A 9.5A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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