DMG7702SFG Datasheet | Diodes Incorporated

30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 10mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V Package ID TA = +25°C POWERDI3333-8 12 A 9.5A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications - Backlighting - Power Management Functions - DC-DC Converters Features - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: - Low RDS(ON) - minimize conduction losses - Low VSD - reducing the losses due to body diode conduction - Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses - Low gate capacitance (Qg/Qgs) ratio - reduces risk of shootthrough or cross conduction currents at high frequencies - Small form factor thermally efficient...