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DMG8N65SCT Datasheet

N-CHANNEL MOSFET

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DMG8N65SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
650V
RDS(ON)
1.3Ω@VGS = 10V
Package
TO220AB
(Type TH)
ID
TC = +25°C
8A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMG8N65SCT
Case
TO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
=Manufacturer’s Marking
8N65SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
1 of 7
www.diodes.com
January 2017
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMG8N65SCT Datasheet

N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt
Steady
State
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMG8N65SCT
Value
650
±30
8.0
3.8
12
12
3.6
389
5
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RJA
RJC
TJ, TSTG
Value
125
50
54
1
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
Typ
Max
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
650
Zero Gate Voltage Drain Current
IDSS
1
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
IGSS
100
Gate Threshold Voltage
VGS(TH)
2
3
4
Static Drain-Source On-Resistance
RDS(ON)
0.9
1.3
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
VSD
0.87
1.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Ciss
1,217
Coss
115
Crss
12
RG

1.24

Qg

30

Qgs
4.8
Qgd
13.3
tD(ON)
23
tR
46
tD(OFF)
115
tF

52

tRR
296
QRR

2.7

Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Test Condition
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4A
VGS = 0V, IS = 8A
VDS = 25V, f = 1.0MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1.0MHz
VDD = 520V, ID =8A,
VGS = 10V
VDD = 450V, RG = 25, ID =8A,
VGS = 10V
di/dt = 100A/μs, VDS = 100V,
IF = 8A
DMG8N65SCT
Document number: DS38402 Rev. 2 - 2
2 of 7
www.diodes.com
January 2017
© Diodes Incorporated


Part Number DMG8N65SCT
Description N-CHANNEL MOSFET
Maker Diodes
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