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DMHC6070LSD - 60V MOSFET

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive.

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ADVANCE INNEFWORPRMOADTIUOCNT DMHC6070LSD 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 60V -60V RDS(ON) Max 100mΩ @ VGS = 10V 120mΩ @ VGS = 4.5V 170mΩ @ VGS = -10V 250mΩ @ VGS = -4.5V ID Max TA = 25°C 4.1A 3.7A 3.1A 2.6A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Applications  DC Motor Control  DC-AC Inverters Features  2 x N + 2 x P Channels in a SOIC Package  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.
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