DMN10H170SFG Datasheet - Diodes

N-Channel MOSFET

DMN10H170SFG Features

* 100% Unclamped Inductive Switch (UIS) test in production

* Low RDS(ON)

* ensures on state losses are minimized

* Small form factor thermally efficient package enables higher density end products

* Occupies just 33% of the board area occupied by SO-8 enabling smaller end pro

DMN10H170SFG General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * Backlighting * Power Management Functions * DC-DC Converters POWERDI3333 DMN10.

DMN10H170SFG Datasheet (298.24 KB)