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DMN2009LSS Datasheet

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) max
8m@ VGS = 10V
9m@ VGS = 4.5V
12m@ VGS = 2.5V
ID max
TA = +25°C
12A
10A
8A
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
SO-8
S
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
D
SD
S DG
TOP VIEW
GD
Top View
Internal Schematic
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2009LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
N2009LS
YY WW
14
Chengdu A/T Site
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
85
N2009LS
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
N2009LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN2009LSS Datasheet

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 5)
Steady State
Pulsed Drain Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
DMN2009LSS
Value
20
12
12
9.6
42
Units
V
V
A
A
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
gfs
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
Min
20
0.5
0.5




Typ
27
0.7
2555
523
496
1.1
28.9
58.3
3.7
11.4
Notes:
5. Device mounted on 2 oz, FR-4 PCB, with RJA = 62.5°C/W
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
1
100
1.2
8
9
12
1.2




Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
nA VGS = 12V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10V, ID = 12A
mVGS = 4.5V, ID = 10A
VGS = 2.5V, ID = 8A
S VDS = 5V, ID = 6.5A
V VGS = 0V, IS = 3A
pF
pF VDS = 10V, VGS = 0V, f = 1.0MHz
pF
VGS = 0V VDS = 0V, f = 1MHz
VDS = 10V, VGS = 4.5V, ID = 12A
nC
VDS = 10V, VGS = 10V, ID = 12A
VDS = 10V, VGS = 10V, ID = 12A
VDS = 10V, VGS = 10V, ID = 12A
DMN2009LSS
Document number: DS31409 Rev. 7 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated


Part Number DMN2009LSS
Description SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 5 Pages
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