DMN2013UFDE Datasheet - Diodes

20V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2013UFDE Features

* 0.6mm profile

* ideal for low profile applications PCB footprint of 4mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliab

DMN2013UFDE General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data * * * * * Case: U-DFN2020-6 Case Material: Molded Plastic.

DMN2013UFDE Datasheet (273.28 KB)

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DMN2013UFDE

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20v n-channel enhancement mode mosfet.
DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ.

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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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DMN2013UFDE Features

DMN2013UFDE General Description

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