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DMN2013UFDE - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: U-DFN2020-6 Case Material: Molded Plastic

Key Features

  • 0.6mm profile.
  • ideal for low profile.

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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ @ VGS = 1.5V Package U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 ID TA = +25°C 10.5A 9.4A 6.5A 5.5A Features         0.6mm profile – ideal for low profile applications PCB footprint of 4mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.