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DMN2029USD - Dual N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Backlighting Feat

Key Features

  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram.
  • Terminal.

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Full PDF Text Transcription for DMN2029USD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2029USD. For precise diagrams, and layout, please refer to the original PDF.

NAEDWVAPNRCOED IUNCFTORMATION DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 25m @ VGS = 4.5V 35m @ VGS = 2.5V Package S...

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V(BR)DSS 20V RDS(on) max 25m @ VGS = 4.5V 35m @ VGS = 2.5V Package SO-8 ID TA = +25°C 5.8A 4.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Backlighting Features  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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