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DMN24H11DS Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Applications  DC-DC converters  Power-management functions  Battery-operated systems and solid-state relays  Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET

Overview

Product Summary BVDSS 240V RDS(ON) 11Ω @ VGS = 10V 12Ω @ VGS = 4.5V ID TA = +25°C 0.27A 0.

Key Features

  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface-Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
  • An automotive-compliant part is available under separate datasheet (DMN24H11DSQ) Mechanical Data.
  • Pack.