DMN26D0UFB4 mosfet equivalent, n-channel enhancement mode mosfet.
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* N-Channel MOSFET Low On-Resistance:
* 3.0 Ω @ 4.5V
* 4.0 Ω @ 2.5V
* 6.0 Ω @ 1.8V
* 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low .
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior swit.
and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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* DC-DC Converter.
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