DMN26D0UFB4 - N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

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Datasheet Details

Part number	DMN26D0UFB4
Manufacturer	DIODES
File Size	108.17 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMN26D0UFB4-Diodes.pdf

DMN26D0UFB4 Product details

Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power management functions Mechanical Data Case: X2-DFN1006-3 Case Material: Molded Plas

Features

N-Channel MOSFET Low On-Resistance:.
3.0 Ω @ 4.5V.
4.0 Ω @ 2.5V.
6.0 Ω @ 1.8V.
10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability.

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Published: Oct 29, 2014 |