DMN26D0UFB4 Datasheet - Diodes

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UFB4 Features

* N-Channel MOSFET Low On-Resistance:

* 3.0 Ω @ 4.5V

* 4.0 Ω @ 2.5V

* 6.0 Ω @ 1.8V

* 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.4mm M

DMN26D0UFB4 General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * DC-DC Converters Power management functions *

DMN26D0UFB4 Datasheet (108.17 KB)

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DMN26D0UFB4

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DIODES ↗

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N-channel enhancement mode mosfet.
DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ID TA = 25°C 240mA 170mA Feat.

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DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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DMN26D0UFB4 Features

DMN26D0UFB4 General Description

Datasheet Details

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