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ADVANCED INNEFWORPRMOATDIUOCNT
Product Summary
V(BR)DSS 30V
RDS(ON) 25mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID TA = +25°C
6.2A
5.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Load Switch DC-DC Converters Power Management Functions
DMN3023L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.