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DMN3027LFG - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • 100% UIS (Avalanche) Rated.
  • 100% Rg Tested.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription

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ADVANCE INNEFWORPRMOADTIUOCNT Green DMN3027LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS 30V RDS(ON) max 18.6mΩ @ VGS = 10V 26.5mΩ @ VGS = 4.5V ID TA = +25°C 8.0A 6.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  100% UIS (Avalanche) Rated  100% Rg Tested  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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