DMN3200U Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Diodes Incorporated

Overview: NEW PRODUC YM DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT.

Datasheet Details

Part number	DMN3200U
Manufacturer	Diodes Incorporated
File Size	263.44 KB
Description	N-channel Enhancement Mode Field Effect Transistor
Datasheet	DMN3200U_Diodes.pdf

Key Features

Low On-Resistance.
90mΩ @ VGS = 4.5V.
110mΩ @ VGS = 2.5V.
200mΩ @ VGS = 1.5V.
Low Gate Threshold Voltage.
Low Input Capacitance.
ESD Protected Gate.
Fast Switching Speed.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: SOT23.
Case Material: Molded Plastic,.

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