- Part: DMN3200U
- Description: N-channel Enhancement Mode Field Effect Transistor
- Manufacturer: Diodes Incorporated
- Size: 263.44 KB
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DMN3200U Key Features
- Low On-Resistance
- 90mΩ @ VGS = 4.5V
- 110mΩ @ VGS = 2.5V
- 200mΩ @ VGS = 1.5V
- Low Gate Threshold Voltage
- Low Input Capacitance
- ESD Protected Gate
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Other DMN3200U Datasheets
| Manufacturer |
Part Number |
Description |
VBsemi |
DMN3200U-7
|
N-Channel 30V MOSFET |
