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DMN4800LSSQ - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD.

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Full PDF Text Transcription for DMN4800LSSQ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN4800LSSQ. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 14mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Description...

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@ VGS = 10V 20mΩ @ VGS = 4.5V ID max TA = +25°C 8.6A 7.1A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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