DMN53D0LV Datasheet DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR

Manufacturer: Diodes Incorporated

DMN53D0LV dual n-channel enhancement mode field-effect transistor by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN53D0LV
Manufacturer	Diodes Incorporated
File Size	609.40 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR
Download	DMN53D0LV Download (PDF)

General Description

and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Overview

DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.

Key Features

Dual N-Channel MOSFET.
Low On-Resistance.
Very Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/ Output Leakage.
Ultra-Small Surface-Mount Package.
ESD Protected to 2kV.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
For automotive.

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