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DMN53D0U Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.

General Description

and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating).

Key Features

  • N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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