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DMN5L06DMKQ Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

General Description

and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 General Purpose Interfacing Switch  Power Management Functions Mechanical Data  Case: SOT-26  Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020C  Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Overview

NEW PRODUCT DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) max 2.0Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V 3.0Ω @ VGS = 1.

Key Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected up to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable.