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DMN601WKQ - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Motor controls Power-management functions Backlighting Low On-Resistance: RDS(ON) Low Gate

Key Features

  • BVDSS 60V RDS(ON) Max 2.0Ω @ VGS = 10V ID Max TA = +25°C 300mA.

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Full PDF Text Transcription for DMN601WKQ (Reference)

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DMN601WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS 60V RDS(ON) Max 2.0Ω @ VGS = 10V ID Max TA = +25°C 300mA Description and Applicati...

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Max 2.0Ω @ VGS = 10V ID Max TA = +25°C 300mA Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor controls  Power-management functions  Backlighting  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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