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Diodes Semiconductor Electronic Components Datasheet

DMN6040SSD Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
60V
RDS(on) max
40mΩ @ VGS = 10V
55mΩ @ VGS = 4.5V
DMN6040SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ID
TA = +25°C
5.0A
4.4A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Top View
S1 D1
G1 D1
S2 D2 G1
G2 D2
Top View
Pin Configuration
D1 D2
G2
S1 S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN6040SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
N 6040 SD
YY WW
14
= Manufacturer’s Marking
N6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
WW = Week (01 - 53)
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
1 of 6
www.diodes.com
August 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6040SSD Datasheet

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMN6040SSD
Value
60
±20
5.0
4.1
6.6
5.3
2.5
30
14.2
10
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.3
0.8
102
61
1.7
1.1
75
50
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
60
1
Typ
30
35
4.5
0.7
1287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
Max
100
±100
3
40
55
1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
nA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.5A
S VDS = 10V, ID = 4.3A
V VGS = 0V, IS = 1A
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 30V, ID = 4.3A
nS VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
nS IS = 4.3A, dI/dt = 100A/μs
nC IS = 4.3A, dI/dt = 100A/µs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN6040SSD
Document number: DS35673 Rev. 4 - 2
2 of 6
www.diodes.com
August 2014
© Diodes Incorporated


Part Number DMN6040SSD
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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