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DMN6040SVT Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6040SVT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on) max
44mΩ @ VGS = 10V
60mΩ @ VGS = 4.5V
ID
TA = 25°C
5.0A
4.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Backlighting
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Drain
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Gate
Body
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMN6040SVT-7
Case
TSOT26
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
32D
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6040SVT Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMN6040SVT
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = 5V
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
IAR
EAR
Value
60
±20
5.0
4.0
6.3
5.0
4.3
3.4
5.4
4.3
2.1
30
14.2
10
Units
V
V
A
A
A
A
A
A
A
mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = 25°C
TA = 70°C
Steady state
t<10s
TA = 25°C
TA = 70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.75
106
69
1.8
1.1
68
44
20
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
100
80
60
Single Pulse
RθJA = 72°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
100
RDS(on)
10 Limited
PW = 10µs
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1
PW = 1ms
PW = 100µs
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated


Part Number DMN6040SVT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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