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Diodes Semiconductor Electronic Components Datasheet

DMN6140L Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6140L
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on) max
140m@ VGS = 10V
170m@ VGS = 4.5V
ID
TA = +25°C
2.3A
2.1A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
SOT23
D
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.0072 grams (Approximate)
D
G
Top View
GS
Pin Configuration
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN6140L-7
DMN6140L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N61
N61 = Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMN6140L
Document number: DS35621 Rev. 4 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
December 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMN6140L Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMN6140L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
60
20
1.6
1.2
2.0
1.6
2.3
1.8
2.9
2.3
1.5
10
Units
V
V
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
0.7
0.4
183
115
1.3
0.8
94
61
39
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
60
1
Typ
92
115
2.2
0.75
315
18
16
0.65
8.6
4.1
1.0
1.7
2.6
3.6
16.3
2.7
16.8
9.0
Max
1
±100
3
140
170
1.0
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 60V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 1.8A
VGS = 4.5V, ID = 1.3A
S VDS = 15V, ID = 1.8A
V VGS = 0V, IS = 0.45A
pF
VDS = 40V, VGS = 0V
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 30V, ID = 1.8A
ns
VDS = 30V, VGS = 10V,
RG = 6.0ΩID = 1.8A
ns
nC IF = 1.8A, di/dt =100A/µs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN6140L
Document number: DS35621 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated


Part Number DMN6140L
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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