DMN62D0UW Datasheet | Diodes Incorporated

NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 2Ω @ VGS = 4.5V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 340m A 300m A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Motor Control - Power Management Functions - Backlighting Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://.diodes./products/automotive/automotiveproducts/. - This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/ - An Automotive-pliant Part is Available Under Separate Datasheet (DMN62D0UWQ) Mechanical Data - Case: SOT323 - Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208...