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DMNH4005SCTQ Datasheet

N-CHANNEL MOSFET

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Product Summary
V(BR)DSS
40V
RDS(ON)
4.0mΩ @ VGS = 10V
DMNH4005SCTQ
Green
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
ID
TC = +25°C
150A
Features
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB
D
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMNH4005SCTQ
TO220AB
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4005SCT
YYWW
DMNH4005SCTQ
Document number: DS38859 Rev. 1 - 2
4005SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week (01 to 53)
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMNH4005SCTQ Datasheet

N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS = 10V
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L=1mH
Avalanche Energy (Note 7) L=1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH4005SCTQ
Value
40
20
150
100
90
80
30
500
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TC = +25°C
TC = +70°C
Symbol
PD
RθJC
TJ, TSTG
Value
165
100
0.9
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
1
Typ
3.4
2,846
742
242
1.9
48
23
9.5
11.5
6.6
12.1
18.3
4.9
29
24
Max
1
±100
3
4.0
1.2
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 32V, VGS = 0V
nA VGS = 16V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 1A
pF
VDS = 20V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = 20V, ID = 20A
ns
VDD = 20V, VGS = 10V,
RG = 1, ID = 20A
ns
nC IF = 15A, di/dt = 100A/µs
DMNH4005SCTQ
Document number: DS38859 Rev. 1 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated


Part Number DMNH4005SCTQ
Description N-CHANNEL MOSFET
Maker Diodes
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