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DMP1046UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1046UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
P-Channel -12V
RDS(ON) max
61m@ VGS = -4.5V
81m@ VGS = -2.5V
115m@ VGS = -1.8V
ID MAX
TA = +25°C
-3.8A
-3.3A
-2.8A
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance (RDS(on))
and yet maintain superior switching performance, making it ideal for
high-efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
D2
D2
G1
S1
Pin1
S2
G2
D1
D1
Bottom View
D1 D2
G1 G2
S1 S2
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP1046UFDB -7
DMP1046UFDB -13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
U-DFN2020-6
P6 YM
P6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1046UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP1046UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
-12
±8
-3.8
-3.0
-5.0
-4.0
-1
-15
-12
8
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
2.2
92
55
20
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Min
-12
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
37
47
63
-0.65
915
225
183
56.9
10.7
17.9
1.7
3.0
5.7
11.5
27.8
26.4
Max
-
-1.0
±100
-1
61
81
115
-1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -12V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -3.6A
mVGS = -2.5V, ID = -3.2A
VGS = -1.8V, ID = -1.0A
V VGS = 0V, IS = -4.5A
pF
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -6V, ID = -4.3A
nC
ns
ns VDD = -6V, VGS = -4.5V,
ns RL = 1.6, RG = 1
ns
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Part Number DMP1046UFDB
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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