* LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching
* Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection
DMP1081UCB4 Datasheet (354.77 KB)
DMP1081UCB4
354.77 KB
P-channel mosfet.
DMP1081UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 0.065Ω Qg 2.5nC Qgd 0.6nC ID -.
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