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DMP1081UCB4 - P-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching.
  • Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.0mm × 1.0mm.
  • Height = 0.62mm for Low Profile.
  • ESD = 3kV HBM Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription for DMP1081UCB4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMP1081UCB4. For precise diagrams, and layout, please refer to the original PDF.

DMP1081UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 0.065Ω Qg 2.5nC Qgd 0.6nC ID -3.3A Description This new ...

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-12V RDS(ON) 0.065Ω Qg 2.5nC Qgd 0.6nC ID -3.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 0.065Ω to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching  Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential  CSP with Footprint 1.0mm × 1.0mm  Height = 0.62mm for Low Profile  ESD = 3kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and

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