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DMP1100UCB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1100UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
BVDSS
-12V
RDS(ON)
65mΩ
Qg
9nC
Qgd
2.4nC
ID
-3.2A
Features and Benefits
Built-in G-S Protection Diode against ESD 2kV HBM
Ultra Small 0.8mm x 0.8mm Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications. It is a High performance MOSFET in ultra-small 0.8mm
x0.8mm package.
Portable Applications
Load Switch
Power Management Functions
Mechanical Data
Case: X2-WLB0808-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
UBM Opening: 203m
ESD PROTECTED
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMP1100UCB4-7
Case
X2-WLB0808-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
9W = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan Feb
12
2017
E
Mar
3
2018
F
Apr May
45
2019
G
Jun Jul
67
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov Dec
ND
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP1100UCB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP1100UCB4
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Source Current @ VGS = -4.5V (Note 5)
Continuous Source Current @ VGS = -4.5V (Note 6)
Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%)
Continuous Source-Drain Diode Current
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
Value
-12
8
-2.5
-2.0
-3.2
-2.6
-13
-1.2
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
.
Symbol
PD
RJA
PD
RJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Min
-12
-
-
-0.35
Typ
-
-
-
-0.55
Max
-
1
10
-0.8
Unit
V
µA
µA
V
Static Drain-Source On-Resistance
RDS(ON)
-
65 83
80 96
90 150
115 170
135 300
150 400
m
Forward Transfer Admittance
Body Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs| - 6.5 -
VSD - -0.7 -
Ciss - 680 820
Coss - 220 290
Crss - 205 280
Rg - 11.2 17
Qg - 9.0 14
Qgs - 1.0 -
Qgd - 2.6 -
tD(ON) - 4.4
9
tR
- 10.1
-
tD(OFF)
-
22
33
tF
- 20
-
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Value
0.67
187
1.1
117
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Test Condition
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3A
VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -1A
VGS = -1.5V, ID = -1A
VGS = -1.4V, ID = -1A
VGS = -1.3V, ID = -1A
VDS = -4V, IS = -1.5A
VGS = 0V, IS = -1.5A,
VDS = -6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -6V,
ID = -2A
VDD = -4V, ID = -2A
VGEN = -4.5V, Rg = 1Ω, RL = 3Ω
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated



Part Number DMP1100UCB4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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