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DMP2023UFDF Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2023UFDF
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
27m@ VGS = -4.5V
32m@ VGS = -2.5V
50m@ VGS = -1.8V
90m@ VGS = -1.5V
ID max
TA = +25°C
-7.6A
-6.7A
-5.2A
-3.9A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
U-DFN2020-6
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.007 Grams (Approximate)
D
G
Top View
Bottom View
Pin Out
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP2023UFDF-7
DMP2023UFDF-13
Marking
3F
3F
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2020-6
3F
3F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2014
B
Month
Code
Jan Feb
12
DMP2023UFDF
Datasheet number: DS37249 Rev. 4 - 2
2015
C
Mar
3
2016
D
2017
E
Apr May Jun
456
1 of 7
www.diodes.com
2018
F
2019
G
Jul Aug Sep
78
9
2020
H
Oct
O
2021
I
Nov Dec
ND
January 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2023UFDF Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2023UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-20
±8
-7.6
-6.1
-9.5
-7.6
-40
-2
- 23
27
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<5s
TA = +25°C
TA = +70°C
Steady State
t<5s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.73
0.47
171
112
2.03
1.30
62
40
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min Typ Max
-20 — —
— — -1
— — ±100
-0.4 — -1.0
— 27
32
50
— 90
— -0.8 -1.2
— 1837 —
— 131 —
— 115 —
— 14.8 —
— 27 —
— 2.8 —
— 3.1 —
— 5.8 —
— 19.3 —
— 168.5 —
— 77.3 —
— 46.5 —
— 33.8 —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP2023UFDF
Datasheet number: DS37249 Rev. 4 - 2
2 of 7
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -20V, VGS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -7.0A
m
VGS = -2.5V, ID = -5.0A
VGS = -1.8V, ID = -3.0A
VGS = -1.5V, ID = -1.0A
V VGS = 0V, IS = -1.0A
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = -15V, VGS = -4.5V,
ID = -4.0A
ns
VDS = -15V, VGS = -4.5V,
RG = 1, ID = -4.0A
ns IF = -1.0A, di/dt = 100A/μs
nC IF = -1.0A, di/dt = 100A/μs
January 2015
© Diodes Incorporated


Part Number DMP2023UFDF
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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