900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Diodes Semiconductor Electronic Components Datasheet

DMP2033UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Product Summary
V(BR)DSS
-20V
RDS(ON)
33m@ VGS = -4.5V
ID
TA = 25°C
-5.8A
DMP2033UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Qg & Qgd
Small Footprint 1.5-mm × 1.5-mm
Gate ESD Protection 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Battery Management
Load Switch
Battery Protection
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (approximate)
ESD PROTECTED TO 3kV
GDS
D DS
DSS
Top-View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2033UCB9-7
Case
U-WLB1515-9
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
AW
YM
AW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
1 of 6
www.diodes.com
June 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2033UCB9 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2033UCB9
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current
Steady
State
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-20
-6
-4.2A
-3.3A
-5.8A
-4.5A
-30
Units
V
V
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
1.0
1.8
126.8
69
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
@Tc = 25°C
BVDSS
BVGSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-6.1
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-0.6
28
35
45
10.8
-0.7
15
25
382
204
86
26.1
5.4
0.7
1.5
8.5
11.8
47
56
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-
-1
-100
-1.1
33
45
65
-
-1
-
-
500
270
115
35
7.0
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = -250μA
V IGS = -250μA, VDS = 0V
μA VDS = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2A
mΩ VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -2A
S VDS = -10V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = -9.5V, IF = -2A,
ns di/dt = 200A/μs
pF
pF VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V,
nC ID = -2A
ns
ns VDD = -10V, VGS = -4.5V,
ns IDS = -2A, RG = 2,
ns
DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated


Part Number DMP2033UCB9
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
PDF Download

DMP2033UCB9 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 DMP2033UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy