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DMP2033UVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2033UVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
65m@VGS = -4.5V
100m@VGS = -2.5V
ID
TA = +25°C
-4.2A
-3.4A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.0013 grams (approximate)
TSOT26
D1
6D
D2
5D
G3
4S
Top View
Top View
Pin-Out
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP2033UVT-7
DMP2033UVT -13
Case
TSOT26
TSOT26
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
Shanghai A/T Site
20X = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
1 of 5
www.diodes.com
March 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2033UVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Steady
State
Pulsed Drain Current (Note 6)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMP2033UVT
Value
-20
±8
-4.2
-3.4
-10
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.2
100
1.7
74
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
TJ = +25°C
BVDSS
IDSS
IGSS
-20
VGS(th)
-0.5
Typ Max
⎯⎯
-1.0
±100
— -0.9
45 65
Static Drain-Source On-Resistance
RDS(ON)
57 100
80 200
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs| 9
Ciss 845
Coss
72
Crss
63
Qg 10.4
Qgs 1.5
Qgd 1.9
tD(on)
6.5
tr 13.4
tD(off) 51.5
tf 21.8
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A
mVGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A
S VDS = -5V, ID = -4A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
nC
nC
nC
VGS = -4.5V, VDS = -4V,
ID = -3.5A
ns
ns VDS = -4V, VGS = -4.5V,
ns RG = 6Ω, ID = -1A
ns
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated


Part Number DMP2033UVT
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 5 Pages
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