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DMP2035UVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
-20V
RDS(on) max
35mΩ @ VGS = -4.5V
45mΩ @ VGS = -2.5V
ID
TA = 25°C
-6.0A
-5.2A
DMP2035UVT
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
ESD protected Up To 3KV
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Motor Control
Power management functions
Analog Switch
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
Drain
TSOT26
ESD PROTECTED TO 3kV
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin-Out
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMP2035UVT-7
DMP2035UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
20P
20P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
March 2012
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2035UVT Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2035UVT
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Value
-20
±12
-6.0
-4.8
-7.2
-5.7
-5.2
-4.1
-6.2
-4.9
-2.0
-24
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
106
74
2.0
65
46
11.8
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
Symbol
BVDSS
IDSS
IGSS
VGS(th)
/VGS(th) TJ
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-20
-0.4
Typ
-0.7
2.5
23
30
41
18
-0.7
1610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
Max Unit
V
-1 µA
±10 µA
-1.5 V
mV/°C
35
45 mΩ
62
S
-1.0 V
2400
210
200
14.1
23.1
33
19
150
64
25
8
pF
Ω
nC
ns
ns
nC
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
ID = -250μA , Referenced to 25°C
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -5.5A
VGS = 0V, IS = -1A
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -10V, VGS = -4.5V
ID = -4A
VGS = -4.5V, VDS = -10V, RG = 6Ω,
ID = -1A, RL = 10Ω
IF =-4.5A, di/dt=100A/µS
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated


Part Number DMP2035UVT
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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