900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Diodes Semiconductor Electronic Components Datasheet

DMP2038USS Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2038USS
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
38m@ VGS = -4.5V
56m@ VGS = -2.5V
ID max
TA = +25°C
-6.5A
-5.0A
Description and Applications
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Backlighting
Power Management Functions
DC-DC Converters
 
SO-8
S 
S
S
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072g (approximate)
D D 
D
D G 
Top View
GD
Top View
Pin-Out
S 
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP2038USS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Shanghai A/T Site
= Manufacturer’s Marking
P2038US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMP2038USS
Document number: DS36919 Rev. 2 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2038USS Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2038USS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Steady
State
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L=0.3mH
Avalanche Energy (Note 7) L=0.3mH
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
-20
±8
-6.5
-5.2
-25
2
13.2
26
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-0.4
Typ
24
33
-0.7
1496
130
116
14.4
2.6
2.7
13.7
14.0
79.1
35.5
Max
-1
±100
-1.1
38
56
-1.2
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
mΩ
VGS = -4.5V, ID = -5A
VGS = -2.5V, ID = -4.3A
V VGS = 0V, IS = -2.1A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
nC
VDS = -10V, VGS = -4.5V
ID = -4.5A
ns
VDD = -10V, VGS = -4.5V,
RG = 6, RL = 10, ID = -1A
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP2038USS
Document number: DS36919 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated


Part Number DMP2038USS
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
PDF Download

DMP2038USS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 DMP2038USS P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy