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DMP2060UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2060UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(ON) max
90mΩ @ VGS = -4.5V
137mΩ @ VGS = -2.5V
ID MAX
TA = +25°C
-3.2A
-2.6A
Description
This MOSFET is designed to minimize on-state resistance (RDS(ON))
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe; Solderable per
MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
Q1 P-CHANNEL MOSFET
Q2 P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMP2060UFDB -7
DMP2060UFDB -13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2020-6
FD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMP2060UFDB
Document number: DS37422 Rev. 2 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2060UFDB Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2060UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-20
±12
-3.2
-2.5
-1.5
-18
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RJA
RJC
TJ, TSTG
Value
1.4
2.2
92
55
30
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-20
VGS(th)
RDS(ON)
VSD
-0.35
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ
59
76
-0.65
881
84
67
14.3
11
18
1.5
2.3
5.0
9.5
29.7
20.4
23.6
11.4
Notes:
5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to product testing.
Max
-1.0
±10
-1.4
90
137
-1.2
Unit
V
μA
μA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Test Condition
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.9A
VGS = -2.5V, ID = -2.3A
VGS = 0V, IS = -3.0A
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -10V, ID = -3.7A
VDD = -10V, VGS = -4.5V,
RL = 3.3Ω, RG = 1Ω
IS = -3.0A, dI/dt = 100A/μs
IS = -3.0A, dI/dt = 100A/μs
DMP2060UFDB
Document number: DS37422 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated


Part Number DMP2060UFDB
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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