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DMP2100UCB9 - P-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching.
  • Vgs(th) = -0.7V typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.5mm × 1.5mm.
  • Height = 0.62mm for Low Profile.
  • ESD = 3kV HBM Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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NEW PRODUCT DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 80mΩ Qg 3.3nC Qgd 0.6nC ID -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential  CSP with Footprint 1.5mm × 1.5mm  Height = 0.62mm for Low Profile  ESD = 3kV HBM Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.