datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Diodes Semiconductor Electronic Components Datasheet

DMP210DUFB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP210DUFB4 pdf
DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
RDS(on)
5@ VGS = -4.5V
7@ VGS = -2.5V
10@ VGS = -1.8V
15@ VGS = -1.5V
ID
TA = +25°C
-200mA
-170mA
-140mA
-50mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Features and Benefits
P-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH)
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-low package profile, 0.4mm maximum package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
ESD protected
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP210DUFB4-7
DMP210DUFB4-7B
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
DMP210DUFB4-7
S
D N1
G
Top View
Dot Denotes
Drain Side
DMP210DUFB4
Document number: DS35026 Rev. 6 - 2
DMP210DUFB4-7B
G
N1 D
S
Top View
Bar Denotes Gate
and Source Side
N1 = Product Type Marking Code
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP210DUFB4 Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP210DUFB4 pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -1.8V
Pulsed Drain Current
Steady
TA = +25°C
State
TA = +70°C
Steady
State
TA = +25°C
TA = +70°C
TP = 10µs
Symbol
VDSS
VGSS
ID
ID
IDM
DMP210DUFB4
Value
-20
±10
-200
-160
-140
-110
-600
Units
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Min Typ Max
BVDSS
IDSS
-20


 -100
-50
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
-0.5

200
-0.5

20
13.72
4.01
2.34
7.7
19.3
25.9
31.5
100
1
10
-1.0
5
7
10
15
-1.2
175
30
20

Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Unit Test Condition
V VGS = 0V, ID = -250µA
nA VDS = -16V, VGS = 0V
nA VDS = -5.0V, VGS = 0V
nA VGS = 5.0V, VDS = 0V
µA VGS = 8.0V, VDS = 0V
µA VGS = 10.0V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -50mA
VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA
VGS = -1.2V, ID = -1mA
mS VDS = -10V, ID = -200mA
V VGS = 0V, IS = -115mA
pF
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
ns
VGS = -4.5V, VDD = -15V
ID = -180mA, RG = 2.0
DMP210DUFB4
Document number: DS35026 Rev. 6 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated


Part Number DMP210DUFB4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
PDF Download
DMP210DUFB4 pdf
DMP210DUFB4 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Diodes
Diodes
DMP210DUFB4 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy