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DMP2160UFDBQ Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
-20V
RDS(ON) max
70mΩ @ VGS = -4.5V
85mΩ @ VGS = -2.5V
ID MAX
TA = +25°C
-3.8A
-3.3A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
DMP2160UFDBQ
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage, -0.9V Max
Fast Switching Speed
Low Input/Output Leakage
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
Type B
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
DG S
32 1
456
SG D
Top View
Internal Schematic
D1 D2
G1 G2
S1 S2
Q1 P-CHANNEL
Q2 P-CHANNEL
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMP2160UFDBQ-7
Case
U-DFN2020-6 Type B
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMP2160UFDBQ
Document Number: DS37546 Rev. 1 - 2
1 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP2160UFDBQ Datasheet

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2160UFDBQ
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
P2 = Marking Code
YM = Date Marking
P2 Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1
2009
W
Feb
2
2010
X
Mar
3
2011
Y
Apr
4
2012
Z
2013
A
2014
B
May
5
Jun
6
Jul Aug
78
2015
C
Sep
9
2016
D
Oct
O
2017
E
Nov
N
2018
F
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.8
-13
Units
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max
BVDSS -20  
IDSS
  -1
IGSS
  100
  800
VGS(th)
RDS (ON)
-0.45


54
68
86
-0.9
70
85
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
8
0.7 -1.2
536
68
59
8.72
6.5
0.8
1.4
11.51
12.09
55.34
27.54
Notes:
6. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V VGS = 0V, ID = -250µA
A VDS = -20V, VGS = 0V
nA VGS = 8V, VDS = 0V
VGS = 12V, VDS = 0V
V VDS = VGS, ID = -250A
VGS = -4.5V, ID = -2.8A
mVGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
S VDS = -5V, ID = -2.8A
V VGS = 0V, IS = -1.6A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = -4.5V, VDD = -10V,
nC ID = -1.5A
nC
ns
ns VGEN = -4.5V, VDD = -10V,
ns RL = 10Ω, RG = 6Ω
ns
DMP2160UFDBQ
Document Number: DS37546 Rev. 1 - 2
2 of 6
www.diodes.com
January 2015
© Diodes Incorporated


Part Number DMP2160UFDBQ
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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