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DMP3007SFG Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3007SFG
Green
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
-30V
RDS(ON) Max
6m@ VGS = -10V
13mΩ @ VGS = -4.5V
ID Max
TC = +25°C
-70A
-45A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low RDS(ON) Ensures on State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied By SO-8 Enabling
Smaller End Product
ESD Protected Gate
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: PowerDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.030 grams (Approximate)
D
S Pin 1
S
S
G
G
ESD PROTECTED
Top View
D
D
D
D
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP3007SFG-7
DMP3007SFG-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
V08
V08= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMP3007SFG
Document number: DS39018 Rev. 2 - 2
1 of 7
www.diodes.com
September 2016
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP3007SFG Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Notes 8) L = 1mH
Avalanche Energy (Notes 8) L = 1mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(TH)
RDS(ON)
VSD
-1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
4.3
6.6
-0.7
2826
606
305
23
31.2
64.2
10.6
11.6
4.8
4.3
306
125
19
9.8
Max
-1
±10
-3.0
6
13
-1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP3007SFG
Document number: DS39018 Rev. 2 - 2
2 of 7
www.diodes.com
DMP3007SFG
Value
-30
±25
-70
-55
-3.0
-120
-16
130
Unit
V
V
A
A
A
A
mJ
Value
1.2
105
2.8
45
3.0
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -24V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -11.5A
VGS = -4.5V, ID = -8.5A
V VGS = 0V, IS = -1A
pF
pF VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC VDS = -15V, ID = -11.5A
nC
ns
ns VDD = -15V, VGS = -10V,
ns Rg = 6, ID = -11.5A
ns
ns
nC IS = -11.5A, dI/dt = 100A/μs
September 2016
© Diodes Incorporated


Part Number DMP3007SFG
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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