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DMP3012LPS Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3012LPS
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Features and Benefits
V(BR)DSS
-30V
RDS(ON)
9m@ VGS = -10V
12m@ VGS = -4.5V
ID
TC = +25°C
-45A
-35A
Description and Applications
This new generation 30V P-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(ON) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
POWERDI5060-8
Pin1
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
ESD HBM Protected up to 1kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
D
G
S
S
S
D
D
D
Top View
Bottom View
S
Internal Schematic
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMP3012LPS-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
P3010LS
YY WW
= Manufacturer’s Marking
P3012LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
SS SG
POWERDI is a registered trademark of Diodes Incorporated.
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP3012LPS Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (Notes 6)
Avalanche Current (Notes 7) L = 1mH
Avalanche Energy (Notes 7) L = 1mH
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IAR
EAR
DMP3012LPS
Value
-30
±20
13.2
10.5
11.4
9.1
-100
-24
292
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)
Thermal Resistance, Junction to Case @ TC = +25°C (Notes 6 )
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.29
97
2.36
53
4.0
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
-30
-1.1
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ
-1.6
7.5
8.5
30
-0.65
6807
988
647
6.2
139
66
19
21
8.9
10.5
254
95
Max
-1.0
±100
-2.1
9.0
12.0
-1.0
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -250µA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mVGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
S VDS = -15V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -10A
nC
ns
ns VDS = -15V, VGEN = -10V,
ns RG = 6, ID = -1A
ns
POWERDI is a registered trademark of Diodes Incorporated.
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated



Part Number DMP3012LPS
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 6 Pages
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