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DMP3160L - P-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMP3160L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMP3160L. For precise diagrams, and layout, please refer to the original PDF.

DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) 122mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V ID TA = +25°C -2.7A -2.0A Description This new genera...

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mΩ @ VGS = -4.5V ID TA = +25°C -2.7A -2.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.

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